エ キ ゾ ー ス ト マ ニ フォ ー ルド エ キ ゾ ー ス ト マ ニ フォ ー ルド パンドラスマイカー

スライド
スライド
ボールブッシュ
ボールブッシュ
スライド
スライド
ÓÏÐÀÂËÅÍÈÅ ×ÀÑÒÍÛÌ ÊÀÏÈÒÀËÎÌ - C5
ÓÏÐÀÂËÅÍÈÅ ×ÀÑÒÍÛÌ ÊÀÏÈÒÀËÎÌ - C5
スライド
スライド
ファイル
ファイル
カンボジア
カンボジア
スライド タイトルなし
スライド タイトルなし
PowerPoint プレゼンテーション
PowerPoint プレゼンテーション
ユーザーマニュアル - Jabra
ユーザーマニュアル - Jabra
インストール ガイド
インストール ガイド
レスポンシブル・ケア - 関西ペイント
レスポンシブル・ケア - 関西ペイント
こちら - メッセ・デュッセルドルフ・ジャパン
pandora.com logg innv class="yp-grid-headline-3">こちら - メッセ・デュッセルドルフ・ジャパン
+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö +Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö ...
+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö +Ð Ö+Ð Ö+Ð Ö+Ð Ö+Ð Ö ...
ダウンロード
ダウンロード
ダウンロード
ダウンロード
ダウンロード
ダウンロード
ダウンロード
ダウンロード
PowerPoint プレゼンテーション
PowerPoint プレゼンテーション
インストール ガイド
インストール ガイド
PowerPoint プレゼンテーション
PowerPoint プレゼンテーション
プレゼンテーション - IFC
プレゼンテーション - IFC
エコすけの体は - タダノ
エコすけの体は - タダノ
ウッドコーンオーディオシステム - ビクター
ウッドコーンオーディオシステム - ビクター
ウッドコーン オーディオシステム - ビクター
ウッドコーン オーディオシステム - ビクター
MEDICA 2010 - メッセ・デュッセルドルフ・ジャパン
MEDICA 2010 - メッセ・デュッセルドルフ・ジャパン
Light+Building - メサゴ・メッセフランクフルト
Light+Building - メサゴ・メッセフランクフルト
ウッドコーン オーディオシステム - JVC
ウッドコーン オーディオシステム - JVC
No.1213 アルファスーパーボールエンドミル ASB形 カタログ - 日立ツール
No.1213 アルファスーパーボールエンドミル ASB形 カタログ - 日立ツール
1ライセンスでできる! シングルサーバレプリケーションを ... - ARCserve
1ライセンスでできる! シングルサーバレプリケーションを ... - ARCserve

installeer pandora
pandora silver armband
Sitio web oficial de pandora

C5 トランジスタ データシート

品名: C5

材料: Si

種類: NPN

コレクタ損失 (Pc): 0.15 W

コレクタ·ベース間電圧 (Vcb): 50 V

コレクタ·エミッタ間電圧 (Vce): 45 V

エミッタ·ベース間電圧 (Veb): 3 V

コレクタ電流(直流) (Ic): 0.03 A

最大ジャンクション温度 (Tj): 125 °C

トランジション周波数(fT): 100 MHz

直流電流増幅率 (hfe): 135

パッケージ: SOT23

C5 トランジスタ パラメトリック検索

C5 Datasheet (PDF)

1.1. 2sc5876fra.pdf Size:1239K _update

C5
C5

AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 2SA2088FRA 4) Complements the 2SA2088 0.1Min. Each lea

1.2. utc50n06l.pdf Size:145K _update

C5
C5

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 It is mainly suitable electronic ballast, and low po

1.3. 2sc5633.pdf Size:125K _update

C5
C5

 〈SMALL-SIGNAL TRANSISTOR〉 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm 2SC5633 is a super mini package resin sealed 4.6 MAX silicon NPN epitaxial transistor, 1.5 1.6 It is designed for high voltage application. C E B 0.53 FEATURE 0.4 MAX ●Low collector to emitter saturation voltage. 0.48

1.4. 2sc5343-o.pdf Size:225K _update

C5
C5

 2SC5343 NPN Silicon Transistor Description PIN Connection • General small signal amplifier C B Features • Low collector saturation voltage E : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) TO-92 • Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25°C Cha

1.5. 2sc5551ae-td-e.pdf Size:185K _update

C5
C5

Ordering number : ENA1118A 2SC5551A RF Transistor http://onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta

1.6. 2sc5231a-8-tl-e.pdf Size:407K _update

C5
C5

Ordering number : ENA1077A 2SC5231A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SMCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25°C Paramete

1.7. 2sc5147_3da5147.pdf Size:264K _update

C5
C5

2SC5147(3DA5147) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电色度信号输出及视频信号放大。 Purpose: Ideal for Color TV chroma output and amplification of video signals. 特点: 击穿电压高,集电极输出电容小,安全工作区宽。 Features: High breakdown voltage,low collector output capacitance,wide SOA. 极限参数/Absolute maxim

1.8. 2sc5814.pdf Size:149K _update

C5
C5

 〈SMALL-SIGNAL TRANSISTOR〉 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application. FEATURE ●Low collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA) ●Fac

1.9. 2sc5658rm3.pdf Size:98K _update

C5
C5

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http://onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER • Reduces Board Space TRANSISTOR

1.10. 2sc5501a-4-tr-e.pdf Size:236K _update

C5
C5

Ordering number : ENA1061A 2SC5501A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ra

1.11. 2sc5635.pdf Size:130K _update

C5
C5

 :mm 2.1 0.425 0.425 1.25 1

1.12. 2sc5027af.pdf Size:236K _update

C5
C5

RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

1.13. 2sc5226a-4-tl-e.pdf Size:237K _update

C5
C5

Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

1.14. 2sc5305.pdf Size:156K _update

C5
C5

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle

1.15. bc546abk_bc547abk_bc548abk_bc549abk_bc546bbk_bc547bbk_bc548bbk_bc549bbk_bc546cbk_bc547cbk_bc548cbk_bc549cbk.pdf Size:81K _update

C5
C5

BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-03 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

1.16. 2sc5658fha.pdf Size:1053K _update

C5
C5

AEC-Q101 Qualified General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC2412KFRA 2SC4081FRA 2. Complements the 2SA1037AK / 2SA1576A / 2SA1037AKFRA / 2SA1576AFRA 2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

1.17. 2sc5634.pdf Size:127K _update

C5
C5

 :mm 2.5 0.5 0.5 1.5 1

1.18. 2sc5801.pdf Size:100K _update

C5
C5

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re

1.19. 2sc5488a-tl-h.pdf Size:384K _update

C5
C5

Ordering number : ENA1089A 2SC5488A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°

1.20. 2sc5964-td-e.pdf Size:188K _update

C5
C5

Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free

1.21. 2sc5566-td-e.pdf Size:228K _update

C5
C5

Ordering number : EN6307C 2SA2013/2SC5566 Bipolar Transistor http://onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales mini

1.22. bc556abk_bc557abk_bc558abk_bc559abk_bc556bbk_bc557bbk_bc558bbk_bc559bbk_bc556cbk_bc557cbk_bc558cbk_bc559cbk.pdf Size:80K _update

C5
C5

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-07 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

1.23. 2sc5663tgp.pdf Size:178K _update

C5
C5

CHENMKO ENTERPRISE CO.,LTD 2SC5663TGP SURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current * Collector saturation voltage is low. VCE(sat) 1.24. bc547ba3.pdf Size:412K _update

C5
C5

Spec. No. : C204A3 Issued Date : 2015.01.23 CYStech Electronics Corp. Revised Date : Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BC547BA3 Description • The BC547BA3 is designed for use in driver stage of AF amplifier and low speed switching. • Complementary to BC557BA3. • Pb-free package Symbol Outline BC547BA3 TO-92 B:Base C:Collector

1.25. 2sc5706-tl-e.pdf Size:326K _update

C5
C5

Ordering number : EN6912D 2SA2039/2SC5706 Bipolar Transistor http://onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High al

1.26. 2sc5161.pdf Size:182K _update

C5
C5

SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC5161 TO-252 Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 Features 5.30-0.2 0.50-0.7 Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC / IB =1A/ 0.2A High breakdown voltage.VCEO =400V 0.127 +0.1 max 0.80-0.1 F

1.27. 2sc5227a-5-tb-e.pdf Size:229K _update

C5
C5

Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

1.28. 2sc5227a-4-tb-e.pdf Size:229K _update

C5
C5

Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

1.29. 2sc536s.pdf Size:111K _update

C5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

1.30. 2sc536k.pdf Size:620K _update

C5
C5

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高电流和宽阔的安全工作区。 Large current capacity and wide ASO 用途 / Applications 用于小信号一般放大电路。 Small signal general purpose amplifier appl

1.31. tpc5658nnd03.pdf Size:295K _update

C5

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER Excellent hFE linearity BACK 3. COLLECTOR Complementary to TPA2029NND03 E B APPLICATION General Purpose trans

1.32. 2sc5964-td-h.pdf Size:188K _update

C5
C5

Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free

1.33. 2sc5245a-4-tl-e.pdf Size:236K _update

C5
C5

Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain ⏐ ⏐2 : S21e =10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz) ⏐ ⏐

1.34. 2sc5200n.pdf Size:153K _update

C5
C5

2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications • Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output

1.35. 2sc5226a-5-tl-e.pdf Size:237K _update

C5
C5

Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

1.36. 2sc5200bl.pdf Size:213K _update

C5
C5

RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00±0.20 18.00 ø3.30±0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit

1.37. 2sc5415ae-td-e.pdf Size:184K _update

C5
C5

Ordering number : ENA1080A 2SC5415A RF Transistor http://onsemi.com 12V, 100mA, fT=6.7GHz, NPN Single PCP Features • High gain ⏐ ⏐2 : S21e =9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-

1.38. 2sc5027a.pdf Size:236K _update

C5
C5

RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

1.39. 2sc5343-g.pdf Size:225K _update

C5
C5

 2SC5343 NPN Silicon Transistor Description PIN Connection • General small signal amplifier C B Features • Low collector saturation voltage E : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) TO-92 • Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25°C Cha

1.40. 2sc5569-td-e.pdf Size:224K _update

C5
C5

Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor http://onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales mini

1.41. 2sc5621.pdf Size:180K _update

C5
C5

 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit:mm DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN 1.5 epitaxial transistor. 0.35 0.8 0.35 It is designed for high frequency voltage application. ① FEATURE ② ③ ・High gain bandwidth product. fT=4.5GHz ・High gain, low noise. ・Can opera

1.42. 2sc5658m3.pdf Size:98K _update

C5
C5

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http://onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER • Reduces Board Space TRANSISTOR

1.43. 2sc5347ae-td-e.pdf Size:201K _update

C5
C5

Ordering number : ENA1087A 2SC5347A RF Transistor http://onsemi.com 12V, 150mA, fT=4.7GHz, NPN Single PCP Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : S21e =8dB typ (f=1GHz) ⏐ ⏐2 : NF=1.8dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltag

1.44. 2sc5636.pdf Size:102K _update

C5
C5

 :mm 1.6 0.4 0.4 0.8 1

1.45. 2sc5490a-tl-h.pdf Size:397K _update

C5
C5

Ordering number : ENA1091A 2SC5490A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SSFP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz) ⏐ ⏐2 • High gain ⏐ ⏐2 : S21e =10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz t

1.46. tcc598.pdf Size:352K _update

C5
C5

HG RF POWER TRANSISTOR TCC598 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD1448 (TCC598) RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .25 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .POUT 4.0 W MIN. WITH 7.0 dB GAIN = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1448 TCC598 PIN CONNECTION DESCRIPTION Th

1.47. 2sc5536a-tl-h.pdf Size:411K _update

C5
C5

Ordering number : ENA1092A 2SC5536A RF Transistor http://onsemi.com 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features • Low-noise : NF=1.8dB typ (f=150MHz) • High gain S21e =16dB typ (f=150MHz) : ⏐ ⏐2 • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

1.48. 2sc5706-h.pdf Size:326K _update

C5
C5

Ordering number : EN6912D 2SA2039/2SC5706 Bipolar Transistor http://onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High al

1.49. 2sc5974.pdf Size:86K _update

C5
C5

〈SMALL-SIGNAL TRANSISTOR〉 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit : mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 ・High Emitter to Base voltage VEBO=50V ・High Reverse hFE ・Low ON RESISTANCE. RON=1Ω 1.27 1.

1.50. 2sc5994-td-e.pdf Size:203K _update

C5
C5

Ordering number : EN8035A 2SC5994 Bipolar Transistor http://onsemi.com ( ) 50V, 2A, Low VCE sat , NPN Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at

1.51. tpc5663nnd03.pdf Size:304K _update

C5

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TOP TPC5663NND03 TRANSISTOR (1.2×1.2×0.5) unit: mm DESCRIPTION B E NPN Epitaxial planar Silicon Transistor C 1. BASE FEATURES BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) ≤250mA At IC =200mA / IB =10mA E B APPLI

1.52. 2sc5374a-tl-e.pdf Size:408K _update

C5
C5

Ordering number : ENA1090A 2SC5374A RF Transistor http://onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features • High gain ⏐ ⏐2 : S21e =10.5dB typ (f=1GHz) • High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit

1.53. 2sc5646a-tl-h.pdf Size:371K _update

C5
C5

Ordering number : ENA1120A 2SC5646A RF Transistor http://onsemi.com 4V, 30mA, fT=12.5GHz, NPN Single SSFP Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain ⏐ ⏐2 : S21e =9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen

1.54. 2sc5707-tl-e.pdf Size:332K _update

C5
C5

Ordering number : EN6913B 2SA2040/2SC5707 Bipolar Transistor http://onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High al

1.55. 2sc5277a-2-tl-e.pdf Size:403K _update

C5
C5

Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain ⏐ ⏐2 : S21e =10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz) ⏐

Il più grande parco divertimenti al coperto d'Italia
Tantissime attrazioni per tutta la famiglia e giostre per ragazzi
Divertimento tra lo zucchero filato e la frutta caramellata

Il più grande parco divertimenti al coperto d’Italia

16-17 dicembre 2017
Dal 22 dicembre 2017 al 7 gennaio 2018
13-14 gennaio 2018

Winterello

Presto online!

Braccialetto

Clicca qui!!

Intrattenimento

Clicca qui!

Attrazioni

Clicca qui

Partner

Supporter